NXP LDMOS Transistor

• Typical pulsed performance at the frequency of 225 MHz,
• Supply voltage of 50 V and an IDq of 40 mA,
• Output power = 1200 W 
• Power gain = 24 dB
• Efficiency = 71 %
• Easy power control
• Integrated ESD protection
• Excellent ruggednessHigh efficiency
• Excellent thermal stability
• Designed for broadband operation (10 MHz to 500 MHz)
• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)